Manufacturer Part Number
STF13N65M2
Manufacturer
STMicroelectronics
Introduction
The STF13N65M2 is a high-performance, high-voltage N-channel MOSFET transistor suitable for a wide range of power conversion and switching applications.
Product Features and Performance
High breakdown voltage of 650V
Low on-resistance of 430mΩ
Continuous drain current of 10A at 25°C
Wide operating temperature range up to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power efficiency
High reliability and ruggedness
Suitable for high-voltage, high-power applications
Optimized for low conduction and switching losses
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 430mΩ
Continuous Drain Current (Id): 10A
Input Capacitance (Ciss): 590pF
Power Dissipation (Pd): 25W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
The STF13N65M2 is a direct replacement for a variety of high-voltage MOSFET transistors in power conversion and switching applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and home appliances
Lighting control
Automotive electronics
Product Lifecycle
The STF13N65M2 is an active product and is not nearing discontinuation. Replacement or upgraded products are available from the manufacturer as needed.
Key Reasons to Choose This Product
High efficiency and low power losses
Reliable and rugged design
Suitability for high-voltage, high-power applications
Ease of integration and compatibility with existing systems
Availability of replacement and upgrade options
Manufacturer reputation for quality and innovation