Manufacturer Part Number
STF13N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-resistance and fast switching capability
Product Features and Performance
600V breakdown voltage
Low on-resistance of 365mOhm @ 5.5A, 10V
Fast switching with gate charge of 19nC @ 10V
Wide operating temperature range of -55°C to 150°C
Capable of handling up to 11A of continuous drain current at 25°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable and robust performance across wide temperature range
Fast switching enables higher frequency operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id) @ 25°C: 11A
Input Capacitance (Ciss) @ 100V: 730pF
Power Dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
TO-220FP package for reliable through-hole mounting
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Industrial and consumer electronics
Product Lifecycle
Current product in STMicroelectronics' portfolio
No known discontinuation plans at this time
Key Reasons to Choose This Product
Excellent power efficiency and performance through low on-resistance
Wide operating temperature range for reliable operation in diverse conditions
Fast switching capability enabling high-frequency applications
Robust and RoHS-compliant design for quality and safety
STF13N80K5 MOSSTMicroelectronics