Manufacturer Part Number
STF13NM60N
Manufacturer
STMicroelectronics
Introduction
High performance, low RDS(on) N-channel power MOSFET
Product Features and Performance
600V drain-source voltage
Very low on-state resistance (RDS(on)) of 360mΩ
High continuous drain current of 11A at 25°C
Low input capacitance of 790pF
Suitable for switching applications up to 200 kHz
Low gate charge of 30nC
Product Advantages
Excellent energy efficiency
High power density
Reliable performance
Easy to drive and integrate
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Maximum Gate-Source Voltage (VGS): ±25V
On-State Resistance (RDS(on)): 360mΩ
Continuous Drain Current (ID): 11A
Input Capacitance (Ciss): 790pF
Power Dissipation (PD): 25W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of switching power supply and motor drive applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current production, no plan for discontinuation
Replacement and upgrade options available
Key Reasons to Choose
Excellent energy efficiency and power density
Reliable and robust performance
Easy to drive and integrate into designs
Comprehensive portfolio of technical support and resources