Manufacturer Part Number
STF11N50M2
Manufacturer
STMicroelectronics
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 500 V
Vgs (Max) of ±25 V
Rds On (Max) of 530 mOhm @ 4 A, 10 V
Continuous Drain Current (Id) of 8 A at 25°C
Input Capacitance (Ciss) of 395 pF @ 100 V
Power Dissipation (Max) of 25 W at Tc
Gate Charge (Qg) of 12 nC @ 10 V
Product Advantages
High voltage handling capability
Low on-resistance
High continuous drain current
Suitable for high-power applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) (Max) of 4 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On) of 10 V
Operating Temperature range of -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Full Pack package
Compatibility
Compatible with a variety of high-power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
Current product offering
Replacement options may be available in the future
Key Reasons to Choose This Product
Excellent high-voltage handling capability
Low on-resistance for efficient power conversion
High continuous drain current for high-power applications
Wide operating temperature range for versatile use
RoHS compliance for environmental responsibility
Reliable TO-220 package for robust performance
STF10NM60N 10NM60NSTMicroelectronics