Manufacturer Part Number
STF10NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-220 package
Product Features and Performance
High drain-source breakdown voltage (600V)
Low on-resistance (550mOhm @ 4A, 10V)
High current capability (10A continuous drain current at 25°C)
Fast switching speed
Low gate charge (19nC @ 10V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power conversion efficiency
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Vdss: 600V
Vgs(max): ±25V
Rds(on) (max): 550mOhm @ 4A, 10V
Id (max): 10A @ 25°C
Ciss (max): 540pF @ 50V
Power dissipation (max): 25W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Power converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for demanding applications
Wide operating temperature range
RoHS3 compliance for environmental safety
Suitable for a variety of high-voltage, high-power applications
STF10NK60Z(045Y)STMicroelectronics