Manufacturer Part Number
STF10NM65N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-220FP package
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 650V
On-Resistance (Rds(on)) of 480mΩ @ 4.5A, 10V
Continuous Drain Current (Id) of 9A @ 25°C
Input Capacitance (Ciss) of 850pF @ 50V
Power Dissipation (Ptot) of 25W @ Tc
Product Advantages
Excellent performance-to-cost ratio
Robust and reliable design
Efficient heat dissipation in TO-220FP package
Key Technical Parameters
Vgs(max): ±25V
Vgs(th)(max): 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg)(max): 25nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
Designed for through-hole mounting
Compatible with MDmesh II series
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design
Efficient heat dissipation in compact TO-220FP package
Wide operating temperature range up to 150°C
Suitable for a variety of high-voltage, high-power applications