Manufacturer Part Number
STE26NA90
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor for power electronics applications
Product Features and Performance
High breakdown voltage of 900V
Low on-resistance of 300mΩ
Continuous drain current of 26A at 25°C
High power dissipation of 450W
Fast switching capabilities
N-channel MOSFET configuration
Product Advantages
Excellent performance for power conversion and control
Robust design for high-stress applications
Efficient power handling
Key Technical Parameters
Drain-to-source voltage (Vdss): 900V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 300mΩ
Input capacitance (Ciss): 1770pF
Gate charge (Qg): 660nC
Quality and Safety Features
MOSFET technology provides high reliability
RoHS non-compliant
Compatibility
Suitable for various power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power factor correction
Uninterruptible power supplies
Product Lifecycle
Mature product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose
Excellent performance and efficiency for power conversion
Robust design for high-stress applications
Proven reliability and longevity
Compatibility with a wide range of power electronics systems