Manufacturer Part Number
STE180NE10
Manufacturer
STMicroelectronics
Introduction
The STE180NE10 is a high-power N-channel MOSFET transistor designed for a wide range of industrial and power electronics applications.
Product Features and Performance
100V Drain-to-Source Voltage
180A Continuous Drain Current
6 Ohm On-Resistance at 40A, 10V
-55°C to 150°C Operating Temperature Range
Low Input Capacitance of 21,000 pF
360W Power Dissipation
Product Advantages
Robust and reliable MOSFET design
Excellent thermal management
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage: 100V
Gate-to-Source Voltage: ±20V
On-Resistance: 6 Ohm
Drain Current: 180A
Input Capacitance: 21,000 pF
Power Dissipation: 360W
Quality and Safety Features
RoHS3 Compliant
Hermetically sealed ISOTOP package
Designed for high reliability and safety
Compatibility
Chassis mount configuration
Suitable for various industrial and power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Switching regulators
Industrial automation and control
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for diverse applications
Reliable and robust MOSFET design in a hermetically sealed package
Compatibility with various industrial and power electronics systems
Ongoing availability and support from a reputable manufacturer
STE18NE10NOIGBT Module
STE2512C2W0R015FLITEON