Manufacturer Part Number
STE145N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel Power MOSFET for high-power applications
Product Features and Performance
650V Drain-to-Source Voltage (Vdss)
143A Continuous Drain Current (Id) at 25°C
15mΩ On-Resistance (RDS(on)) at 10V Gate Voltage
18500pF Input Capacitance (Ciss)
679W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent Power Handling Capabilities
High Reliability and Efficiency
Compact ISOTOP Packaging
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
650V Drain-to-Source Voltage
25V Maximum Gate-to-Source Voltage
15mΩ Maximum On-Resistance
143A Continuous Drain Current at 25°C
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Power, High-Voltage Applications
Compatibility
Chassis Mount Footprint
Application Areas
High-Power Switching Circuits
Power Supplies
Motor Drives
Industrial Electronics
Product Lifecycle
This product is currently in production and has no known discontinuation plans.
Key Reasons to Choose This Product
Excellent Power Handling Capabilities: Able to handle up to 679W of power dissipation.
High Reliability and Efficiency: Low on-resistance and advanced MOSFET technology ensure reliable and efficient operation.
Compact Packaging: The ISOTOP package provides a small footprint for space-constrained applications.
Wide Operating Temperature Range: Can operate in temperatures from -55°C to 150°C.
RoHS Compliance: Meets the latest environmental regulations.
STE1206M1W0R010F