Manufacturer Part Number
STE110NS20FD
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
200V Drain-Source Voltage (Vdss)
110A Continuous Drain Current (ID) at 25°C
24mΩ On-State Resistance (RDS(on)) at 50A, 10V
500W Power Dissipation at 25°C
7900pF Input Capacitance (Ciss) at 25V
Operating Temperature up to 150°C
Product Advantages
High current handling capability
Low on-state resistance
High power dissipation
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (RDS(on)): 24mΩ
Continuous Drain Current (ID): 110A
Input Capacitance (Ciss): 7900pF
Quality and Safety Features
RoHS3 compliant
ISOTOP package for efficient heat dissipation
Compatibility
Can be used in a wide range of power electronics and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose
High current and power handling capabilities
Low on-state resistance for efficient performance
Wide operating temperature range
Robust and reliable ISOTOP package
Compliance with RoHS3 regulations
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