Manufacturer Part Number
STE30NK90Z
Manufacturer
STMicroelectronics
Introduction
High voltage N-channel MOSFET transistor
Designed for high-power switching applications
Product Features and Performance
Operating temperature range: -65°C to 150°C
Drain-to-source voltage (Vdss): 900V
Gate-to-source voltage (Vgs) range: ±30V
On-state resistance (Rds(on)): 260mΩ @ 14A, 10V
Continuous drain current (Id): 28A @ 25°C
Input capacitance (Ciss): 12000pF @ 25V
Power dissipation: 500W @ Tc
Product Advantages
High voltage capability
Low on-state resistance
High current handling
Suitable for high-power switching applications
Key Technical Parameters
Transistor technology: MOSFET (Metal Oxide)
FET type: N-Channel
Threshold voltage (Vgs(th)): 4.5V @ 150A
Drive voltage range: 10V
Gate charge (Qg): 490nC @ 10V
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: ISOTOP
Compatibility
Chassis mount package
Application Areas
High-power switching circuits
Power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage capability up to 900V
Low on-state resistance for efficient power conversion
High current handling up to 28A
Suitable for a wide range of high-power switching applications
Robust design and packaging for industrial environments
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