Manufacturer Part Number
STD3NK80ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with SuperMESH technology for efficient power conversion and control applications.
Product Features and Performance
800V drain-to-source voltage
5Ω maximum on-resistance at 1.25A and 10V gate-to-source voltage
5A continuous drain current at 25°C
70W maximum power dissipation at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 485pF at 25V drain-to-source voltage
Fast switching capabilities with low gate charge of 19nC at 10V gate-to-source voltage
Product Advantages
Improved energy efficiency through low on-resistance
Robust design for reliable operation in harsh environments
Compact DPAK surface mount package for space-saving PCB layouts
Excellent thermal management through low power dissipation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.5Ω
Continuous Drain Current (Id): 2.5A
Input Capacitance (Ciss): 485pF
Power Dissipation (Pd): 70W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide operating temperature range
Compatibility
Suitable for various power conversion and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Home appliances
Industrial automation
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent energy efficiency through low on-resistance
Robust and reliable design for harsh environments
Compact DPAK package for space-saving PCB layouts
Efficient thermal management through low power dissipation
Suitable for a wide range of power conversion and control applications
STD3NK60Z D3NK60ZSTMicroelectronics