Manufacturer Part Number
STD3NM60N
Manufacturer
STMicroelectronics
Introduction
The STD3NM60N is a high-performance N-channel MOSFET from STMicroelectronics' MDmesh II series, designed for various power electronics applications.
Product Features and Performance
600V Drain-to-Source Voltage (Vdss)
8Ω Maximum On-Resistance (Rds(on)) at 1.65A, 10V
3A Continuous Drain Current (Id) at 25°C
50W Maximum Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 150°C
Fast Switching Characteristics
Low Gate Charge (Qg) of 9.5nC at 10V
Product Advantages
High efficiency and low power loss
Robust and reliable performance
Suitable for high-voltage power conversion applications
Compact DPAK (TO-252-3) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.8Ω @ 1.65A, 10V
Drain Current (Id): 3.3A (Tc)
Input Capacitance (Ciss): 188pF @ 50V
Gate Charge (Qg): 9.5nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Robust and reliable design
Compatibility
Suitable for various power electronics applications, such as:
- Switch-mode power supplies
- Motor drives
- Inverters
- Converters
Application Areas
Power conversion and control
Industrial automation
Household appliances
Renewable energy systems
Product Lifecycle
The STD3NM60N is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics or other manufacturers.
Key Reasons to Choose This Product
High efficiency and low power loss
Robust and reliable performance
Suitable for high-voltage, high-power applications
Compact DPAK (TO-252-3) package
Wide operating temperature range
Fast switching characteristics
RoHS3 compliance for environmental responsibility
STD3NM60STMicroelectronics
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