Manufacturer Part Number
STD3NK60ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with SuperMESH technology
Product Features and Performance
Wide drain-source voltage range up to 600V
Low on-resistance of 3.6Ω at 1.2A, 10V
Low input capacitance of 311pF at 25V
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 45W
Product Advantages
Excellent switching performance
High reliability and ruggedness
Suitable for high-voltage and high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 2.4A at 25°C
On-Resistance (Rds(on)): 3.6Ω at 1.2A, 10V
Input Capacitance (Ciss): 311pF at 25V
Power Dissipation (Ptot): 45W
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Compatible with various high-voltage and high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Telecommunication equipment
Home appliances
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent switching performance and efficiency
High reliability and ruggedness
Suitable for a wide range of high-voltage and high-power applications
Cost-effective solution for power conversion and control