Manufacturer Part Number
STD2NK60Z-1
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for power conversion applications
Product Features and Performance
Optimized for high-frequency switching
Low on-resistance for high efficiency
High drain-source breakdown voltage for high-voltage applications
Low gate charge for fast switching
Avalanche rated for rugged operation
Product Advantages
Excellent power handling capabilities
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600 V
Maximum Gate-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 8 Ω @ 700 mA, 10 V
Continuous Drain Current (Id): 1.4 A @ 25°C
Input Capacitance (Ciss): 170 pF @ 25 V
Power Dissipation (Pc): 45 W
Quality and Safety Features
RoHS3 compliant
Rugged design for high reliability
Robust against avalanche events
Compatibility
Suitable for use in power conversion, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
High-performance power handling capabilities
Excellent efficiency and switching performance
Robust and reliable design for demanding applications
Suitable for high-voltage, high-current power conversion needs
RoHS3 compliance for environmental-friendly use
STD2NK60Z-1 MOSSTMicroelectronics