Manufacturer Part Number
STD2NK100Z
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in DPAK package
Product Features and Performance
Drain-to-source voltage up to 1000V
Very low on-resistance
Fast switching speed
Suitable for high-voltage, high-power switching applications
Product Advantages
High breakdown voltage
Low conduction losses
Compact DPAK package
Efficient power conversion
Key Technical Parameters
Drain-to-source voltage (Vdss): 1000V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 8.5Ω @ 900mA, 10V
Continuous drain current (Id): 1.85A @ 25°C
Input capacitance (Ciss): 499pF @ 25V
Power dissipation (Tc): 70W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Suitable for high-voltage, high-power applications
Compatibility
Surface mount DPAK package
Compatible with various high-voltage, high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Welding equipment
Industrial automation
Product Lifecycle
Currently available, no plans for discontinuation. Replacements and upgrades may be available.
Key Reasons to Choose
High breakdown voltage up to 1000V
Very low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Compact DPAK package for space-constrained designs
AEC-Q101 qualified for reliable performance in harsh environments
STD2NC50T4-TRSTMicroelectronics