Manufacturer Part Number
STD2NK90Z-1
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with SuperMESH technology
Product Features and Performance
900V Drain-Source Voltage
5Ω On-Resistance
1A Continuous Drain Current
70W Power Dissipation
Low Gate Charge of 27nC
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Reliable and efficient power switching
Reduced power losses
Suitable for high-voltage applications
Wide temperature tolerance
Key Technical Parameters
Drain-Source Voltage: 900V
Gate-Source Voltage: ±30V
On-Resistance: 6.5Ω
Continuous Drain Current: 2.1A
Input Capacitance: 485pF
Power Dissipation: 70W
Quality and Safety Features
RoHS3 Compliant
Suitable for high-voltage, high-power applications
Compatibility
Through-hole mounting
I-PAK package
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and automotive electronics
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide temperature tolerance for diverse applications
Reliable and robust design for long-term use
Compact through-hole package for easy integration
STD2NK90ZSTMicroelectronics
STD3055LVBSEMI