Manufacturer Part Number
STD1NK80Z-1
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET with SuperMESH technology for industrial and consumer applications.
Product Features and Performance
High voltage capability up to 800V
Low on-resistance (Rds(on)) of 16Ω
High continuous drain current (Id) of 1A
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 160pF
Low gate charge (Qg) of 7.7nC
Product Advantages
Reliable and robust design for industrial and consumer applications
Optimized for high-voltage, high-efficiency power conversion
Supports high-frequency switching with low power losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 16Ω @ 500mA, 10V
Continuous Drain Current (Id): 1A @ 25°C
Input Capacitance (Ciss): 160pF @ 25V
Power Dissipation (Pd): 45W @ Tc
Quality and Safety Features
RoHS3 compliant
Qualified to industrial and consumer standards
Compatibility
Suitable for a wide range of industrial and consumer applications requiring high-voltage, high-performance power switching
Application Areas
Switching power supplies
Motor drives
Home appliances
Industrial automation
Lighting control
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
High-voltage capability up to 800V
Low on-resistance for high efficiency
Wide operating temperature range for robust performance
Optimized for high-frequency switching with low power losses
Reliable and robust design for industrial and consumer applications
RoHS3 compliance for environmental responsibility
STD20N06T4VBSEMI