Manufacturer Part Number
STD1NK60T4
Manufacturer
STMicroelectronics
Introduction
N-Channel MOSFET Discrete Semiconductor Product
Product Features and Performance
High voltage handling up to 600V
Low on-resistance of 8.5Ω
Continuous drain current up to 1A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 156pF
Power dissipation up to 30W
Product Advantages
High efficiency and low power loss
Compact DPAK surface mount package
Suitable for high voltage and high power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 8.5Ω @ 500mA, 10V
Drain Current (Id): 1A (Tc)
Input Capacitance (Ciss): 156pF @ 25V
Power Dissipation (Pd): 30W (Tc)
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Compatible with various high-voltage, high-power electronic applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently available, no indications of discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose
High voltage and high power handling capability
Low on-resistance for high efficiency
Wide operating temperature range
Compact surface mount DPAK package
Suitable for a variety of high-power electronic applications
STD1NK60ZVBSEMI