Manufacturer Part Number
STD1NK60-1
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET in I-PAK package
Product Features and Performance
Operates in -55°C to 150°C temperature range
600V drain-to-source voltage rating
5Ω maximum on-resistance at 500mA, 10V gate-to-source
1A continuous drain current at 25°C
156pF maximum input capacitance at 25V drain-to-source
30W maximum power dissipation at 25°C
Product Advantages
Excellent power handling capability
High voltage and current ratings
Low on-resistance for efficient power conversion
Suitable for high-temperature applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 8.5Ω @ 500mA, 10V
Drain current (Id): 1A continuous at 25°C
Input capacitance (Ciss): 156pF @ 25V
Power dissipation (Ptot): 30W at 25°C
Quality and Safety Features
RoHS3 compliant
I-PAK (short leads) package for enhanced reliability
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control
Uninterruptible power supplies (UPS)
Appliances and white goods
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade parts available if needed
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient power conversion
Suitable for high-temperature environments
Reliable I-PAK package
RoHS3 compliance for environmental responsibility
STD1NK80STMicroelectronics