Manufacturer Part Number
STD13003T4
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power NPN bipolar junction transistor (BJT)
Designed for use in power supply, motor control, and industrial applications
Product Features and Performance
High collector-emitter breakdown voltage of 400V
High collector current rating of 1.5A
Low collector-emitter saturation voltage of 3V @ 1.5A collector current
Wide operating temperature range up to 150°C
Rugged DPAK package for high power dissipation
Product Advantages
Reliable high-voltage, high-power operation
Excellent thermal performance
Robust DPAK package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 400V
Collector Current (max): 1.5A
Power Dissipation: 20W
DC Current Gain: 5 @ 1A, 2V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in power supply, motor control, and industrial applications
Application Areas
Power supplies
Motor drives
Industrial equipment
Automotive electronics
Product Lifecycle
Current production part, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose
Reliable high-voltage, high-power performance
Excellent thermal management in DPAK package
Suitable for a wide range of power electronics applications
Robust design and high quality manufacturing
STD12NF06LT4 MOSSTMicroelectronics