STD12NM50N - STMicroelectronics

Manufacturer Part Number

STD12NM50N

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET in DPAK package

Product Features and Performance

High-voltage MOSFET with 500V drain-source voltage

Low on-resistance of 380mΩ at 5.5A/10V

High continuous drain current of 11A at 25°C

Fast switching with low gate charge of 30nC at 10V

Wide operating temperature range up to 150°C

Product Advantages

Efficient power conversion with low conduction losses

Robust design for high-voltage applications

Compact DPAK package for space-saving PCB layout

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 380mΩ @ 5.5A, 10V

Continuous Drain Current (Id): 11A @ 25°C

Input Capacitance (Ciss): 940pF @ 50V

Power Dissipation (Tc): 100W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of high-voltage power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial electronics

Automotive electronics

Product Lifecycle

This product is an active part of the STMicroelectronics portfolio and is not nearing discontinuation. Replacement or upgrade options are available.

Key Reasons to Choose This Product

Excellent power efficiency and low conduction losses

Robust design for high-voltage operation

Compact DPAK package for space-saving PCB layout

Wide operating temperature range up to 150°C

High quality and reliability, backed by STMicroelectronics