Manufacturer Part Number
STD12NM50ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
500V drain-source voltage
11A continuous drain current
380mΩ maximum on-resistance
850pF maximum input capacitance
100W maximum power dissipation
Supports 10V maximum gate-source voltage
Product Advantages
Excellent power efficiency
Fast switching speed
High voltage and current handling capabilities
Compact DPAK surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 380mΩ
Drain Current (Id): 11A
Input Capacitance (Ciss): 850pF
Power Dissipation (Tc): 100W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with a wide range of electronic applications
Application Areas
Suitable for use in power supplies, motor drives, and other high-power electronic circuits
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and efficient design
Reliable and robust construction
Suitable for a variety of high-power applications