Manufacturer Part Number
STB8NM60T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET in D2PAK package
Product Features and Performance
650V drain-source voltage
8A continuous drain current
1Ω on-resistance
400pF input capacitance
100W power dissipation
Operating temperature range: -55°C to 150°C
Product Advantages
Robust design for high-voltage applications
Low on-resistance for efficient power conversion
Compact D2PAK package for space-saving PCB layout
Wide temperature range suitable for harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1Ω @ 2.5A, 10V
Drain Current (Id): 8A @ 25°C
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Power supplies
Motor drives
Industrial automation
Switching mode power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available, depending on the specific application requirements.
Key Reasons to Choose This Product
Robust and reliable high-voltage performance
Efficient power conversion with low on-resistance
Compact D2PAK package for space-saving design
Wide operating temperature range for harsh environments
RoHS3 compliance for environmental responsibility
STB9NB60T4STMicroelectronics