Manufacturer Part Number
STB85NF55T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Optimized for high-frequency, high-power applications
Excellent on-state resistance and low gate charge
Fast switching and low power losses
Product Advantages
Efficient power conversion
Compact and space-saving design
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40 A, 10 V
Current Continuous Drain (Id) @ 25°C: 80 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Power Dissipation (Max): 300 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Suitable for a wide range of high-frequency, high-power applications
Application Areas
Power supplies
Inverters and converters
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current product offering
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency
Compact and space-saving design
Reliable and durable operation
Meets high-reliability standards
Suitable for a wide range of applications