STB8NM60D - STMicroelectronics

Manufacturer Part Number

STB8NM60D

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET

Product Features and Performance

Operating temperature range: -65°C to 150°C

Drain-to-source voltage (Vdss): 600V

Maximum gate-to-source voltage (Vgs): ±30V

On-resistance (Rds(on)): 1Ω @ 2.5A, 10V

Continuous drain current (Id): 8A @ 25°C

Input capacitance (Ciss): 380pF @ 25V

Power dissipation (Tc): 100W

Gate charge (Qg): 18nC @ 10V

Product Advantages

High breakdown voltage

Low on-resistance

High power handling capability

Surface mount packaging

Key Technical Parameters

MOSFET technology

N-channel configuration

Threshold voltage (Vgs(th)): 5V @ 250A

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

TO-263-3, DPak (2 Leads + Tab), TO-263AB package

Application Areas

Switch-mode power supplies

Motor drives

Industrial electronics

Consumer electronics

Product Lifecycle

Actively available

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for improved efficiency

Compact surface mount package

Suitable for a wide range of power electronics applications