Manufacturer Part Number
STB75NF75T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-resistance and high drain current capability, suitable for various power applications.
Product Features and Performance
Optimized MOSFET design for high efficiency and low power loss
Low on-resistance (RDS(on)) of 11 mΩ @ 40 A, 10 V
High drain current capability of 80 A @ 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge (Qg) of 160 nC @ 10 V
Product Advantages
Excellent thermal performance and power dissipation capability
Suitable for high-current, high-power applications
Robust design with high reliability and durability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 75 V
Gate-to-Source Voltage (VGS) (Max): ±20 V
Input Capacitance (Ciss): 3700 pF @ 25 V
Gate Charge (Qg): 160 nC @ 10 V
Power Dissipation (Tc): 300 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount D2PAK (TO-263-3) package
Compatible with various power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
Currently available and in active production
No indication of discontinuation or replacement plans
Several Key Reasons to Choose This Product
Exceptional performance and efficiency with low on-resistance
High current and power handling capability
Robust and reliable design for demanding applications
Wide operating temperature range and thermal management capabilities
Compatibility with various power electronic systems and circuits
STB7102TRSTMicroelectronics