Manufacturer Part Number
STB75NF20
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Suitable for power switching and amplification applications
Product Features and Performance
Robust design with high drain-to-source voltage (200V)
Low on-resistance (34mΩ @ 37A, 10V) for efficient power transfer
High current capacity (75A continuous drain current @ 25°C)
Wide operating temperature range (-50°C to 150°C)
Fast switching capability with low input capacitance (3260pF)
High power dissipation (190W @ Tc)
Product Advantages
Optimized for high-efficiency power conversion
Reliable performance in demanding applications
Compact D2PAK surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 34mΩ @ 37A, 10V
Continuous Drain Current (Id): 75A @ 25°C
Input Capacitance (Ciss): 3260pF @ 25V
Power Dissipation (Pd): 190W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust design for reliable operation
Compatibility
Suitable for a wide range of power electronics and power conversion applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Industrial and automotive electronics
Telecommunications equipment
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High efficiency and power density
Excellent thermal management and reliability
Compact and easy-to-use surface-mount package
Proven performance in demanding power applications
STB7102TRSTMicroelectronics