Manufacturer Part Number
STB7ANM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Designed for automotive and industrial applications
Product Features and Performance
High voltage rating up to 600V
Low on-resistance for high efficiency
High power density and small package size
Capable of handling high continuous drain current up to 5A
Fast switching speed and low gate charge
Product Advantages
Excellent reliability and ruggedness
Suitable for harsh environments
Improved energy efficiency
Compact and space-saving design
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 900mΩ @ 2.5A, 10V
Continuous drain current (Id): 5A @ 25°C
Input capacitance (Ciss): 363pF @ 50V
Power dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Robust design for high reliability
Compatibility
Compatible with a wide range of electronic systems and power supplies
Application Areas
Automotive electronics
Industrial power conversion and control
Switching mode power supplies
Motor drives
Home appliances
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
High efficiency and low power loss
Excellent reliability and ruggedness
Compact and space-saving design
Suitable for harsh automotive and industrial environments
Extensive application versatility
