Manufacturer Part Number
STB6N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET in DPAK (TO-263) package
Product Features and Performance
800V drain-to-source voltage
5A continuous drain current at 25°C
Low on-resistance of 1.6Ω at 2A, 10V
Fast switching capabilities
Robust and reliable design
Product Advantages
Excellent power handling capability
High voltage operation
Low on-resistance for efficient power conversion
Compact DPAK (TO-263) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 800V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 1.6Ω @ 2A, 10V
Continuous drain current (Id): 4.5A @ 25°C
Input capacitance (Ciss): 255pF @ 100V
Power dissipation (Ptot): 85W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long life
Compatibility
Compatible with various power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Home appliances
Industrial control
Product Lifecycle
This product is actively available and not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Efficient power conversion with low on-resistance
Compact and reliable DPAK (TO-263) package
Suitable for a wide range of power electronics applications