Manufacturer Part Number
STB6N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET for use in power conversion and motor control applications
Product Features and Performance
Power MOSFET with low On-Resistance
High Voltage Capability up to 650V
Low Gate Charge for High Switching Efficiency
Wide Operating Temperature Range from -55°C to 150°C
Optimized for Synchronous Rectification and ZVS Topologies
Product Advantages
Excellent Thermal and Electrical Performance
Improved Efficiency and Reduced Power Losses
Reliable Operation in High-Temperature Environments
Compact Surface-Mount Packaging (DPAK)
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.35Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 226pF @ 100V
Power Dissipation (Tc): 60W
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Reliability Power Applications
Compatibility
Suitable for Use in Power Conversion and Motor Control Circuits
Application Areas
Switch-Mode Power Supplies (SMPS)
Industrial Motor Drives
Uninterruptible Power Supplies (UPS)
Solar Inverters and Energy Storage Systems
Transportation Electronics (e.g., EV/HEV)
Product Lifecycle
Currently in active production
Replacement or upgrade parts are available
Key Reasons to Choose This Product
Excellent Electrical and Thermal Performance
High Efficiency and Low Power Losses
Reliable Operation in Demanding Environments
Compact and Versatile Surface-Mount Packaging
Wide Compatibility with Power Conversion and Motor Control Circuits