Manufacturer Part Number
STB6N60M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET
Product Features and Performance
600V breakdown voltage
Low on-resistance
High-speed switching
Suitable for high-power applications
Robust design for harsh environments
Product Advantages
Excellent energy efficiency
High reliability
Compact and space-saving design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.2Ω @ 2.25A, 10V
Continuous Drain Current (Id): 4.5A @ 25°C (Tc)
Input Capacitance (Ciss): 232pF @ 100V
Power Dissipation (Tc): 60W
Quality and Safety Features
RoHS3 compliant
Designed for reliable operation in harsh environments
Compatibility
Suitable for a wide range of high-power applications, including power supplies, motor drives, and industrial automation
Application Areas
Power conversion
Motor control
Industrial automation
Renewable energy systems
Household appliances
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Excellent energy efficiency and high reliability
Robust design for harsh environments
Compact and space-saving package
Suitable for a wide range of high-power applications
Seamless integration and compatibility with existing systems