Manufacturer Part Number
STB60NF06LT4
Manufacturer
STMicroelectronics
Introduction
Power MOSFET device for power management and control applications
Product Features and Performance
N-Channel MOSFET with 60V drain-to-source voltage
Very low on-resistance of 14 mOhm
High continuous drain current of 60A at 25°C
Wide operating temperature range of -65°C to 175°C
Fast switching performance with low gate charge of 66 nC
Compact D2PAK surface mount package
Product Advantages
Efficient power conversion and control
High power density design
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±15V
On-Resistance (Rds(on)): 14 mOhm
Continuous Drain Current (Id): 60A
Input Capacitance (Ciss): 2000 pF
Power Dissipation (Tc): 110W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switching power supplies
Motor drives
Power conversion systems
Industrial automation and control
Product Lifecycle
Current production model, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Robust and reliable performance in harsh environments
Ease of integration with compact surface mount package
Comprehensive technical specifications and support from STMicroelectronics