Manufacturer Part Number
STB60N55F3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the STripFET III series
Suitable for a wide range of power conversion and motor control applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for improved system performance
High power density and low thermal resistance
Robust design for reliable operation
Suitable for harsh environments with operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal management
Efficient power conversion
Reliable and durable performance
Versatile application capabilities
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.5mΩ @ 32A, 10V
Continuous Drain Current (Id): 80A @ 25°C (Tc)
Input Capacitance (Ciss): 2200pF @ 25V
Power Dissipation (Tc): 110W
Quality and Safety Features
RoHS3 compliant
Designed for reliability and durability
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Current production model, no discontinuation plans
Key Reasons to Choose This Product
High efficiency and performance
Robust and reliable design
Versatile application capabilities
Excellent thermal management
Compliance with industry standards
STB601A0N/TRSTMicroelectronics
STB60N03VBsemi