Manufacturer Part Number
STB60NF10T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the STripFET II series
Product Features and Performance
Wide drain-to-source voltage range (100V)
Low on-resistance (23mΩ max at 40A, 10V)
High continuous drain current (80A at 25°C)
High power dissipation (300W at Tc)
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Excellent power efficiency
High power density
Reliable performance in high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 23mΩ @ 40A, 10V
Drain Current (Id Continuous): 80A @ 25°C
Input Capacitance (Ciss Max): 4270pF @ 25V
Power Dissipation (Max): 300W @ Tc
Quality and Safety Features
RoHS3 compliant
D2PAK package for high-power applications
Compatibility
Suitable for a wide range of high-power electronic devices and systems
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Reliable performance in high-power applications
Wide operating temperature range and RoHS3 compliance
Suitable for a variety of high-power electronic applications