STB5N80K5 - STMicroelectronics

Manufacturer Part Number

STB5N80K5

Manufacturer

STMicroelectronics

Introduction

High-voltage, high-performance N-channel MOSFET in DPak (TO-263) package

Product Features and Performance

800V drain-to-source voltage

4A continuous drain current at 25°C

75Ω maximum on-resistance

177pF maximum input capacitance

60W maximum power dissipation

-55°C to 150°C operating temperature range

Product Advantages

High voltage and current handling capability

Low on-resistance for low power loss

Compact DPak (TO-263) surface mount package

Suitable for high power density applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 800V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 1.75Ω @ 2A, 10V

Drain Current (Id): 4A @ 25°C

Input Capacitance (Ciss): 177pF @ 100V

Power Dissipation (Pd): 60W @ Tc

Quality and Safety Features

ROHS3 compliant

Suitable for high-temperature and high-voltage applications

Compatibility

Surface mount DPAK (TO-263) package

Suitable for a wide range of power conversion and control applications

Application Areas

Switched-mode power supplies

Motor drives

Lighting ballasts

Home appliances

Industrial controls

Product Lifecycle

Current production, no known discontinuation

Several Key Reasons to Choose This Product

High voltage and current handling capability

Low on-resistance for high efficiency

Compact surface mount package for high power density

Wide operating temperature range

Proven reliability and performance in various applications