Manufacturer Part Number
STB55NF06T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in D2PAK package for efficient power conversion and motor control applications.
Product Features and Performance
High current handling capability up to 50A continuous drain current
Low on-resistance down to 18 mOhm
High voltage rating up to 60V drain-to-source voltage
Wide operating temperature range from -55°C to 175°C
Fast switching speed with low gate charge of 60 nC
Robust design with high power dissipation capability up to 110W
Product Advantages
Excellent power conversion efficiency
Compact and thermally efficient D2PAK package
Reliable performance in industrial and automotive applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 18 mOhm
Continuous Drain Current (Id): 50A
Input Capacitance (Ciss): 1300 pF
Power Dissipation (Pd): 110W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is an active and ongoing part of STMicroelectronics' portfolio.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High power density and efficiency for compact power conversion designs
Robust and reliable performance in demanding industrial and automotive environments
Comprehensive protection features for safe and reliable operation
Compatibility with a wide range of power electronics applications
Backed by the technical expertise and quality assurance of STMicroelectronics