Manufacturer Part Number
STB57N65M5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
High voltage breakdown capability up to 650V
Low on-resistance down to 63mΩ
High current carrying capability up to 42A
Fast switching speed
Low gate charge for high-frequency applications
Excellent thermal performance
Product Advantages
Efficient power conversion and control
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 63mΩ
Continuous Drain Current (Id): 42A
Input Capacitance (Ciss): 4200pF
Power Dissipation (Tc): 250W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Designed for surface mount applications
Fits standard DPAK (TO-263) package
Application Areas
High-voltage, high-power switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Industrial and automotive electronics
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage and current capabilities
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Reliable and robust design for harsh environments
Compatibility with standard DPAK (TO-263) package
Suitable for a wide range of high-power applications
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