STB15N65M5 - STMicroelectronics

Manufacturer Part Number

STB15N65M5

Manufacturer

STMicroelectronics

Introduction

High-performance 650 V N-Channel MOSFET in DPAK (TO-263) package

Product Features and Performance

650 V drain-to-source voltage

340 mΩ maximum on-resistance

11 A continuous drain current at 25°C

810 pF maximum input capacitance

85 W maximum power dissipation

5 V maximum gate-to-source threshold voltage

Product Advantages

Improved efficiency and performance

High power density

Compact DPAK (TO-263) package

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain-to-source voltage: 650 V

Gate-to-source voltage: ±25 V

On-resistance: 340 mΩ

Drain current: 11 A

Input capacitance: 810 pF

Power dissipation: 85 W

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 150°C

Compatibility

MOSFET technology

Surface mount DPAK (TO-263) package

Application Areas

High-voltage, high-power applications

Power supplies

Motor drives

Inverters

Converters

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available

Key Reasons to Choose

High performance and efficiency

Compact DPAK (TO-263) package

Suitable for high-voltage, high-power applications

RoHS3 compliance and high-temperature operation