STB155N3LH6 - STMicroelectronics

Manufacturer Part Number

STB155N3LH6

Manufacturer

STMicroelectronics

Introduction

High-performance MOSFET transistor for power applications

Product Features and Performance

Excellent on-state resistance (RDS(on)) for low power losses

High current capability up to 80A

Wide operating temperature range from -55°C to 175°C

Low input capacitance (Ciss) for fast switching

High gate charge (Qg) for robust and reliable operation

Product Advantages

Improved energy efficiency

Reduced heat generation

Reliable and robust design

Suitable for high-current, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 30V

Maximum Gate-to-Source Voltage (VGS): ±20V

On-State Resistance (RDS(on)): 3mΩ @ 40A, 10V

Continuous Drain Current (ID): 80A @ 25°C

Input Capacitance (Ciss): 3800pF @ 25V

Power Dissipation (Ptot): 110W @ Tc

Quality and Safety Features

RoHS3 compliant

DPAK (TO-263) package for efficient heat dissipation

Compatibility

Suitable for a wide range of power electronics and motor control applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Currently available product

No discontinuation or end-of-life announced

Key Reasons to Choose This Product

Excellent energy efficiency and low power losses

High current capability for high-power applications

Reliable and robust design for harsh operating conditions

Compact and thermally efficient DPAK package

Suitable for a wide range of power electronics and motor control applications