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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSTB15810
STMicroelectronics
Image may be representation.
See specifications for product details.

STB15810 - STMicroelectronics

Manufacturer Part Number
STB15810
Manufacturer
STMicroelectronics
Allelco Part Number
32D-STB15810
ECAD Model
Parts Description
N-channel 800 V, 0.300 Ohm typ.,
Detailed Description
Package
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Data sheet
STB15810.pdf
In stock: 26997

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Quantity

Specifications

STB15810 Tech Specifications
STMicroelectronics - STB15810 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics - STB15810

Product Attribute Attribute Value  
Manufacturer STMicroelectronics  
Vgs(th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package D2PAK  
Series -  
Rds On (Max) @ Id, Vgs 3.9mOhm @ 55A, 10V  
Power Dissipation (Max) 250W (Tc)  
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Package Tape & Reel (TR)  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 175°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 8115 pF @ 50 V  
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Drain to Source Voltage (Vdss) 100 V  
Current - Continuous Drain (Id) @ 25°C 110A (Tc)  

Parts Introduction

Manufacturer Part Number

STB15810

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

Operates at high temperatures up to 175°C

High continuous drain current of 110A

Low on-resistance of 3.9mΩ

High input capacitance of 8115pF

Maximum power dissipation of 250W

Product Advantages

Suitable for high-power, high-current applications

Enables efficient power conversion and control

Robust design for harsh environmental conditions

Key Technical Parameters

Drain-to-Source Voltage: 100V

Gate-to-Source Voltage: ±20V

Drain Current: 110A

On-Resistance: 3.9mΩ

Input Capacitance: 8115pF

Power Dissipation: 250W

Quality and Safety Features

Designed and manufactured to high quality standards

Suitable for safety-critical applications

Compatibility

Compatible with various power electronics and control systems

Application Areas

Power converters

Motor drives

Inverters

Switching power supplies

Industrial and automotive electronics

Product Lifecycle

Currently in production

Availability of replacement parts and upgrades

Key Reasons to Choose

High power handling and efficiency

Reliable performance in harsh environments

Extensive technical support and product lifecycle

Parts with Similar Specifications

The three parts on the right have similar specifications to STMicroelectronics STB15810

Product Attribute STB15810 STB15NM60N STB160N75F3 STB15NM60ND
Part Number STB15810 STB15NM60N STB160N75F3 STB15NM60ND
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Power Dissipation (Max) 250W (Tc) 125W (Tc) 330W (Tc) 125W (Tc)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.9mOhm @ 55A, 10V 299mOhm @ 7A, 10V 4mOhm @ 60A, 10V 299mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 14A (Tc) 120A (Tc) 14A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 8115 pF @ 50 V 1250 pF @ 50 V 6750 pF @ 25 V 1250 pF @ 50 V
Supplier Device Package D2PAK D2PAK D2PAK D2PAK
Drain to Source Voltage (Vdss) 100 V 600 V 75 V 600 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Vgs (Max) ±20V ±25V ±20V ±25V
FET Type N-Channel N-Channel N-Channel N-Channel
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series - MDmesh™ II STripFET™ FDmesh™ II
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 37 nC @ 10 V 85 nC @ 10 V 40 nC @ 10 V
FET Feature - - - -

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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STMicroelectronics

STB15810

STMicroelectronics
32D-STB15810

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