Manufacturer Part Number
L6387E
Manufacturer
stmicroelectronics
Introduction
The L6387E is a dual IGBT/MOSFET gate driver from STMicroelectronics. It is designed to provide high-current, high-speed gate drive for power semiconductor devices in a wide range of industrial and consumer applications.
Product Features and Performance
Supports both IGBT and N-Channel MOSFET gate drive
Independent half-bridge configuration with two driver channels
Capable of delivering peak output currents up to 400mA (source) and 650mA (sink)
Propagation delay and rise/fall times as low as 50ns and 30ns, respectively
Wide supply voltage range up to 17V
Compatible with 1.5V to 3.6V logic-level inputs
Operating temperature range of -45°C to 125°C
Product Advantages
Highly efficient gate drive solution for power semiconductor devices
Compact 8-pin DIP package for easy integration
Robust design with protection features
Key Reasons to Choose This Product
Optimized for high-speed, high-current gate drive applications
Flexible IGBT and MOSFET support in a single device
Reliable performance across a wide temperature range
Space-saving design with small package footprint
Quality and Safety Features
Robust design with protective features
Complies with industry standards for safety and reliability
Compatibility
The L6387E is compatible with a wide range of IGBT and N-Channel MOSFET power semiconductor devices.
Application Areas
Motor drives
Switch-mode power supplies
Inverters
Other industrial and consumer power electronics applications
Product Lifecycle
The L6387E is an obsolete product. Customers are advised to contact our website's sales team for information on alternative or equivalent products that may be available.
L6388EMTRSTMicroelectronics
L6387