L6386D013TR - STMicroelectronics

Manufacturer Part Number

L6386D013TR

Manufacturer

stmicroelectronics

Introduction

L6386D013TR is an obsolete gate driver designed for power management applications, capable of driving half-bridge configurations with independent channels.

Product Features and Performance

Driven Configuration: Half-Bridge

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

High Side Voltage Max (Bootstrap): 600 V

Rise / Fall Time (Typ): 50ns, 30ns

Operating Temperature Range: -40°C to 150°C

Input Type: Inverting

Product Advantages

High bootstrap voltage up to 600V for effective switching

Can drive both IGBT and N-Channel MOSFETs

Wide operating temperature range suitable for harsh environments

Key Technical Parameters

Voltage Supply: 17V (Max)

Logic Voltage VIL, VIH: 1.5V, 3.6V

Current Peak Output (Source, Sink): 400mA, 650mA

Quality and Safety Features

Operates efficiently within a wide temperature range of -40°C to 150°C, ensuring reliability under varying conditions

Compatibility

Compatible with IGBT and N-Channel MOSFET gate types

Application Areas

Used in half-bridge power management applications across various industries requiring high voltage and power efficiency

Product Lifecycle

Obsolete status; replacements or upgrades should be considered due to potential unavailability in the future

Several Key Reasons to Choose This Product

High reliability and robustness in temperature ranges from -40°C to 150°C

Flexible driving capability suitable for both IGBT and N-Channel MOSFETs

Provides good sinking and sourcing current capabilities with peaks at 650mA and 400mA respectively

Rapid rise and fall times for improved switching performance

Able to handle high side voltages up to 600V, facilitating efficient power switching