L6386ED013TR - STMicroelectronics

Manufacturer Part Number

L6386ED013TR

Manufacturer

stmicroelectronics

Introduction

The L6386ED013TR is a high-performance gate driver designed for power management applications, specifically suited to drive half-bridge circuits composed of IGBTs and N-Channel MOSFETs.

Product Features and Performance

Supports half-bridge driven configuration

Controls independent channels

Capable of driving IGBT and N-Channel MOSFET gate types

Maximum supply voltage of 17V

Logic voltage levels of 1.5V (VIL) and 3.6V (VIH)

Peak output currents of 400mA (source) and 650mA (sink)

Inverting input type

High side voltage capability up to 600V (bootstrap)

Rise and fall times are 50ns and 30ns respectively

Operational over a temperature range of -40°C to 150°C

Product Advantages

The L6386ED013TR offers enhanced switching performance and robustness for high-reliability power management systems.

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Voltage - Supply: 17V (Max)

Current - Peak Output (Source, Sink): 400mA, 650mA

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time (Typ): 50ns, 30ns

Operating Temperature: -40°C to 150°C

Quality and Safety Features

Built to withstand high voltage and current levels with enhanced thermal management properties ensuring reliable operation across diverse environmental conditions.

Compatibility

Compatible with various IGBTs and N-Channel MOSFETs configurations, enhancing its adaptability in multiple gate-driving applications.

Application Areas

Utilized in power management systems, including but not limited to converters, inverters, motor control systems, and power supply units.

Product Lifecycle

This product is currently active with ongoing support and availability. There are no current indications of discontinuation, and replacements or upgrades are available as technological advancements occur.

Several Key Reasons to Choose This Product

High voltage and current driving capabilities ensure suitability for robust power applications.

Rapid switching with precise rise and fall times improve system efficiency.

Operational reliability across a wide temperature range caters to demanding environments.

Compatibility with a broad range of power semiconductor devices allows flexible design options.

Extended product lifecycle with support ensures long-term deployment viability.