Manufacturer Part Number
BUL1203E
Manufacturer
STMicroelectronics
Introduction
High-voltage NPN bipolar junction transistor
Product Features and Performance
Power rating: 100W
Collector-emitter breakdown voltage: 550V
Collector current (max): 5A
Collector cutoff current (max): 100A
Collector-emitter saturation voltage: 1.5V @ 1A, 3A
DC current gain (hFE): 9 min @ 2A, 5V
Product Advantages
High voltage and power handling capability
Robust design for reliable operation
Suitable for a wide range of high-power applications
Key Technical Parameters
Transistor type: NPN
Package: TO-220
Quality and Safety Features
RoHS3 compliant
Housed in a standard TO-220 package for through-hole mounting
Compatibility
Widely compatible with various high-power electronic circuits and systems
Application Areas
High-voltage/high-power switching and amplification circuits
Industrial motor control
Power supplies
Inverters
Welding equipment
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Robust and reliable performance
High voltage and power handling capabilities
Suitable for a wide range of high-power applications
Widely compatible with various electronic circuits and systems
Compliance with RoHS3 regulations for environmental compatibility