Manufacturer Part Number
BUL1102E
Manufacturer
STMicroelectronics
Introduction
Bipolar Junction Transistor (BJT), NPN type
Product Features and Performance
450V collector-emitter breakdown voltage
70W maximum power
4A maximum collector current
100μA maximum collector cutoff current
5V maximum collector-emitter saturation voltage at 400mA/2A
12 minimum DC current gain at 2A/5V
Product Advantages
High voltage and power handling capabilities
Robust and reliable performance
Suitable for high-power switching and amplification applications
Key Technical Parameters
TO-220 package
150°C maximum junction temperature
ROHS3 compliant
Quality and Safety Features
Compliance with RoHS3 directive
Suitable for high-temperature and high-power applications
Compatibility
Through-hole mounting
Widely used in various electronic circuits and systems
Application Areas
Power supplies
Motor drives
Industrial controls
Power amplifiers
Switching circuits
Product Lifecycle
Active product
Replacements and upgrades available from the manufacturer
Key Reasons to Choose
Exceptional voltage and power handling
Reliable and robust performance
Suitable for high-temperature and high-power applications
RoHS3 compliance for environmental responsibility