Manufacturer Part Number
BUL128FP
Manufacturer
STMicroelectronics
Introduction
A high-voltage, high-current NPN bipolar junction transistor (BJT) suitable for power applications.
Product Features and Performance
Capable of handling up to 400V collector-emitter voltage
Supports up to 4A of collector current
Offers a minimum DC current gain (hFE) of 14 at 2A collector current and 5V collector-emitter voltage
Dissipates up to 31W of power
Product Advantages
High voltage and current handling capabilities
Robust design for power applications
Suitable for use in various power electronics circuits
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 400V
Collector Current (IC): 4A
DC Current Gain (hFE): 14 (min) at 2A, 5V
Power Dissipation: 31W
Quality and Safety Features
RoHS3 compliant
TO-220FP package for secure mounting and heat dissipation
Compatibility
Suitable for use in various power electronics circuits, such as motor drives, power supplies, and inverters.
Application Areas
Power amplifiers
Motor drives
Power supplies
Inverters
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power applications
Robust design and packaging for reliable operation
Suitable for a wide range of power electronics circuits
RoHS3 compliance for environmental responsibility
BUL129DSTMicroelectronics