BUL128FP - STMicroelectronics

Manufacturer Part Number

BUL128FP

Manufacturer

STMicroelectronics

Introduction

A high-voltage, high-current NPN bipolar junction transistor (BJT) suitable for power applications.

Product Features and Performance

Capable of handling up to 400V collector-emitter voltage

Supports up to 4A of collector current

Offers a minimum DC current gain (hFE) of 14 at 2A collector current and 5V collector-emitter voltage

Dissipates up to 31W of power

Product Advantages

High voltage and current handling capabilities

Robust design for power applications

Suitable for use in various power electronics circuits

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 400V

Collector Current (IC): 4A

DC Current Gain (hFE): 14 (min) at 2A, 5V

Power Dissipation: 31W

Quality and Safety Features

RoHS3 compliant

TO-220FP package for secure mounting and heat dissipation

Compatibility

Suitable for use in various power electronics circuits, such as motor drives, power supplies, and inverters.

Application Areas

Power amplifiers

Motor drives

Power supplies

Inverters

Product Lifecycle

This product is currently in production and available for purchase.

Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding power applications

Robust design and packaging for reliable operation

Suitable for a wide range of power electronics circuits

RoHS3 compliance for environmental responsibility