NP40N10VDF-E1-AY - Renesas Electronics America Inc

Manufacturer Part Number

NP40N10VDF-E1-AY

Manufacturer

Renesas Electronics Corporation

Introduction

This is a single N-channel MOSFET transistor from Renesas Electronics Corporation.

Product Features and Performance

High voltage capability (100V drain-source voltage)

Low on-resistance (26mOhm max at 20A, 10V)

High continuous drain current (40A at 25°C)

Low gate charge (71nC max at 10V)

Wide operating temperature range (-55°C to 175°C)

Small TO-252 (DPak) surface mount package

Product Advantages

Excellent power efficiency and thermal performance

Suitable for high power switching and amplification applications

Compact and space-saving surface mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 26mOhm max at 20A, 10V

Continuous Drain Current (Id): 40A at 25°C

Input Capacitance (Ciss): 3150pF max at 25V

Power Dissipation: 1.2W at Ta, 120W at Tc

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range up to 175°C

Compatibility

This MOSFET is suitable for use in a variety of high power switching and amplification applications.

Application Areas

Power supplies

Motor drives

Industrial electronics

Telecommunications equipment

Automotive electronics

Product Lifecycle

This product is currently in production and widely available. No discontinuation or replacement plans are known at this time.

Key Reasons to Choose This Product

High voltage and current capabilities for demanding applications

Excellent power efficiency and thermal performance

Compact and space-saving surface mount package

Wide operating temperature range and RoHS3 compliance

Proven reliability and performance from a reputable manufacturer