Manufacturer Part Number
NP40N10PDF-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel MOSFET transistor for power switching applications
Product Features and Performance
100V drain-source voltage
40A continuous drain current at 25°C case temperature
27mΩ maximum on-resistance at 20A, 10V
3150pF maximum input capacitance at 25V
71nC maximum gate charge at 10V
175°C maximum junction temperature
Product Advantages
Excellent on-state resistance for high efficiency
High current handling capability
Compact TO-263 (DPak) surface mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 27mΩ @ 20A, 10V
Drain Current (Id): 40A @ 25°C case temperature
Input Capacitance (Ciss): 3150pF @ 25V
Gate Charge (Qg): 71nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 175°C junction temperature
Compatibility
TO-263 (DPak) surface mount package
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance in terms of on-resistance, current handling, and switching characteristics
Compact and reliable TO-263 (DPak) package
Suitable for high-frequency, high-power switching applications
RoHS3 compliant for use in modern electronic systems
Wide operating temperature range up to 175°C junction temperature
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