HIP2100IBZT7A - Renesas

Manufacturer Part Number

HIP2100IBZT7A

Manufacturer

Renesas Electronics America

Introduction

The HIP2100IBZT7A is a high-performance, half-bridge, N-channel MOSFET gate driver from Renesas Electronics America. This device is designed to provide efficient and reliable control of power MOSFETs or IGBTs in a wide range of industrial and consumer applications.

Product Features and Performance

Supports a wide supply voltage range of 9V to 14V

Provides independent, non-inverting gate drive signals for two N-channel MOSFETs

Capable of delivering peak output currents of up to 2A for both source and sink

Features fast rise and fall times of typically 10ns

Operates over an extended temperature range of -55°C to 150°C

Comes in an 8-SOIC surface mount package

Product Advantages

Robust and reliable gate driver solution for power switching applications

Efficient power delivery with high-current, high-speed gate drive

Flexible design with independent channel configuration

Wide temperature range for use in demanding environments

Key Reasons to Choose This Product

Proven reliability and performance from a trusted semiconductor manufacturer

Optimized for efficient control of power MOSFETs in a wide range of applications

Ease of integration with simple, straightforward interface and package

Comprehensive technical support and product lifecycle management from Renesas

Quality and Safety Features

Designed and manufactured to high quality standards

Overcurrent and undervoltage protection features for enhanced safety

Compatibility

The HIP2100IBZT7A is compatible with a variety of power MOSFETs and can be used in a wide range of industrial, consumer, and automotive applications.

Application Areas

Motor drives

Power supplies

Inverters

Industrial automation equipment

Household appliances

Product Lifecycle

The HIP2100IBZT7A is an obsolete product. Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available.